The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles. Keywords: conductive scanning probe micoscopy; memristor; 3-D modes; resistive

• ] and therefore the characterization of the local electrical properties becomes more and more important. In this work we have combined conductive scanning force microscopy imaging and single-point current–voltage spectroscopy, with more advanced spectroscopy measurements (3-D modes) to characterize the

• memory tests: 3-D modes and I–V spectroscopy Figure 5a depicts a reading current map, I(x,y), performed over a surface region containing a series of squared HR regions obtained by writing at Vtip voltages ranging from Vwr = +1 to +6 V. As seen in the line profile I(x) of Figure 5b, taken along the green